[1] Nanocrystalline Diamond: A High-Impact Carbon Nanomaterial for Multifunctional Applications Including as Nanofiller in Biopolymeric Matrices:
–– Debajyoti Das : In “Carbon-based Nanofillers and their Rubber Nanocomposits” (Elsivier Publication, USA, ed. Yaragalla, Mishra, Thomas, Kalarikkal and Maria) (November, 2018) pp. 123–181.
[2] Solar Photovoltaic Electricity : Status and Prospects for Cost Reduction:
–– A. K. Barua and Debajyoti Das: In “Renewable Energy : Trends and Prospects” ( Publication of ‘The Pennsylvania Academy of Science’ USA, ed. Majumdar, Miller and Panah) ( 2002) pp.199–214.
[3] Plasma Kinetics, Surface Phenomena and Growth Mechanism in Hydrogenated Amorphous Silicon : Transition from Amorphous to Micro- and Nano-Crystalline Si:H
–– Debajyoti Das: In “Solid State Phenomena” (Special Volume on Hydrogenated Amorphous Silicon) (Scitec Publication, Switzerland) Vol. 44-46 (1995) pp.227–258.
Subhashis Samanta
Senior Research Fellow
M.Sc. in Physics (University of Calcutta) Low temperature synthesis of doped and undoped nanocrystalline silicon oxide thin films for silicon solar cell erss@iacs.res.in 1617 (Extn)
Publications |
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| Photocatalytic degradation of Rhodamine-B dye by stable ZnO nanostructures with different calcination temperature induced defects: P. Nandi and D. Das; Appl. Surf. Sci. 465 (2018) 546–556. | ||
| Melting point of Sn as the optimal growth temperature in realizing the favored transparent conducting properties of In2O3:Sn films: L. Karmakar and D. Das; J. Alloys Compd. 767 (2018) 642–650. | ||
| Low temperature growth of carbon nanotubes by microwave plasma stimulated by CO2 as weak oxidant and guided by shadow masking: A. Roy and D. Das; Diam. Relat. Mater. 88 (2018) 204–214. | ||
| Self-doped TiO2 nanowires in TiO2-B single phase, TiO2-B/anatase and TiO2- anatase/rutile heterojunctions demonstrating individual superiority in photocatalytic activity under visible and UV light: P. Makal and D. Das; Appl. Surf. Sci. 455 (2018) 1106–1115. | ||
| Microstructural association of diverse chemical constituents in nc-SiOx:H network synthesized by spontaneous low temperature plasma processing: S. Samanta and D. Das; Physica E 103 (2018) 99–109. | ||
| Structural, Magnetic and Optical Properties of Lanthanum Ferrite Nanoparticles with Application Perspective: S.K. Kundu, D.K. Rana, A. Mukherjee, A. Banerjee, D. Das, S. Basu; Adv. Sci. Lett. 24 (2018) 913–917. | ||
| Controlling the opto-electronic properties of nc-SiOx:H films by promotion of <220> orientation in the growth of ultra-nanocrystallites at the grain boundary: D. Das and S. Samanta; Appl. Surf. Sci. 428 (2018) 757–766. | ||
| Enhancement of multiferroic properties and unusual magnetic phase transition in Eu doped bismuth ferrite nanoparticles: M. Banerjee, A. Mukherjee, A. Banerjee, D. Das and S. Basu, New J. Chem. 41 (2017) 10985–10991. | ||
| Structural studies of n-type nc-Si–QD thin films for nc-Si solar cells: D. Das and D. Kar; J. Phys. Chem. Solids 111 (2017) 115–122. | ||
| Development of optimum p–nc-Si window layers for nc-Si solar cells: P. Mondal and D. Das; Phys. Chem. Chem. Phys. 19 (2017) 21357–21363. | ||
| Magnetic anomalies in Fe-doped NiO nanoparticle: R. Pradeep, A.C. Gandhi, Y. Tejabhiram, I.K.Md. Mathar Sahib, Y. Shimura, L. Karmakar, D. Das, S.Y. Wu and Y. Hayakawa; Mater. Res. Express 4 (2017) 096103. | ||
| Effect of oxygen on the optical, electrical and structural properties of mixed-phase boron doped nanocrystalline silicon oxide thin films: D. Das and P. Mondal; Appl. Surf. Sci. 423 (2017) 1161–1168. | ||
| Structural characterization of silicon thin film superlattice grown at low temperature: D. Kar and D. Das; Superlat. and Microstruc. 111 (2017) 385–395. | ||
| Correlation between the physical parameters of the i–nc-Si absorber layer grown by 27.12 MHz plasma with the nc-Si solar cell parameters: D. Das and P. Mondal; Appl. Surf. Sci. 416 (2017) 980–987. | ||
| The growth of ZnO:Ga:Cu as new TCO film of advanced electrical, optical and structural quality: D. Das and P. Mondal; Physica E 91 (2017) 1–7. | ||
| Further improvements in conducting and transparent properties of ZnO:Ga films with perpetual c-axis orientation: materials optimization and application in silicon solar cells: P. Mondal and D. Das; Appl. Surf. Sci. 411 (2017) 315–320. | ||
| Nanocrystalline silicon thin films from SiH4 plasma diluted by H2 and He in RF-PECVD: S. Samanta and D. Das; J. Phys. Chem. Solids 105 (2017) 90–98. | ||
| Effect of hydrogen in controlling the structural orientation of ZnO:Ga:H as transparent conducting oxide films suitable for applications in stacked layer devices: P. Mondal and D. Das; Phys. Chem. Chem. Phys. 18 (2016) 20450–20458. | ||
| Effect of hydrogen in controlling the structural orientation of ZnO:Ga:H as transparent conducting oxide films suitable for applications in stacked layer devices: P. Mondal and D. Das; Phys. Chem. Chem. Phys. 18 (2016) 20450–20458. | ||
| Opto-electronic properties of P-doped nc-Si–QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration: D. Kar and D. Das; J. Appl. Phys. 120 (2016) 025102. | ||
| Low temperature grown ZnO:Ga films with predominant c-axis orientation in wurtzite structure demonstrating high conductance, transmittance and photoluminescence: D. Das and P. Mondal; RSC Adv., 6 (2016) 6144–6153. | ||
| Self-assembled nc-Si–QD/a-SiC thin films from planar ICP-CVD plasma without H2-dilution: a combination of wide optical gap, high conductivity and preferred <220> crystallographic orientation, uniquely appropriate for nc-Si solar cells: D. Das and D. Kar; RSC Adv., 6 (2016) 3860–3869. | ||
| Rapid synthesis of nc-Si/a-SiNx:H QD thin films by plasma processing for their cost effective applications in photonic and photovoltaic devices: D. Das and B. Sain; RSC Adv. 5 (2015) 63572–63579. | ||
| Superior optical response of size-controlled silicon nano-crystals in a-Si:H/nc-Si:H superlattice films for multi-junction solar cells: D. Kar and D. Das; RSC Adv. 5 (2015) 61118–61126. | ||
| Preferential <220> crystalline growth in nanocrystalline silicon films from 27.12 MHz SiH4 plasma for applications in solar cells: P. Mondal and D. Das; RSC Adv. 5 (2015) 54011–54018. | ||
| Investigation of the vertical electrical transport in a-Si:H/nc-Si:H superlattice thin films: D. Das and D. Kar; Phys. Chem. Chem. Phys. 17 (2015) 17063–17068. | ||
| Further improvements of nano-diamond structures on unheated substrates by optimization of parameters with secondary plasma in MW-PECVD: D. Das and A. Banerjee; Surf. Coat. Tech. 272 (2015) 357–365. | ||
| Anti-Reflection coatings for silicon solar cells from hydrogenated diamond like carbon: D. Das and A. Banerjee; Appl. Surf. Sci. 345 (2015) 204–215. | ||
| Quantum size effects on the optical properties of nc-Si QDs embedded in an a-SiOx matrix synthesized by spontaneous plasma processing: D. Das and A. Samanta; Phys. Chem. Chem. Phys. 17 (2015) 5063–5071. | ||
| Self-assembled ultra-nanocrystalline silicon films with preferred <220> crystallographic orientation for solar cell applications: A. Banerjee and D. Das; Appl. Surf. Sci. 330 (2015) 134–141. | ||
| Self-assembled nc-Si/a-SiNx:H quantum dots thin films – An alternative solid-state light emitting material: B. Sain and D. Das; J. Lumin. 158 (2015) 11–18. | ||
| Spectroscopic and microscopic studies of self-assembled nc-Si/a-SiC thin films grown by low pressure high density spontaneous plasma processing: D. Das and D. Kar; Phys. Chem. Chem. Phys. 16 (2014) 25421–25431. | ||
| Low temperature plasma processing of nc-Si/a-SiNx:H QD thin films with high mobility and preferred (220) orientation – a promising material for third generation solar cells: B. Sain and D. Das; RSC Adv. 4 (2014) 36929–36939. | ||
| Photoluminescence phenomena prevailing in c-axis oriented intrinsic ZnO thin films prepared by RF magnetron sputtering: D. Das and P. Mondal; RSC Adv. 4 (2014) 35735–35743. | ||
| Spectroscopic studies on nC-Si thin films prepared from H2-diluted SiH4-plasma in inductively coupled low pressure RF PECVD: M. Chakraborty, A. Banerjee and D. Das; Phys. E 61 (2014) 95–100. | ||
| Low temperature synthesis of spherical nano-diamond: A. Banerjee and D. Das; J. Exp. Nanosci. 9 (2014) 818–824. | ||
| Conducting Wide Band Gap nc-Si/a-SiC:H Films for Window Layers in nc-Si Solar Cells: D. Kar and D. Das; J. Mater. Chem. A 1 (2013) 14744–14753. | ||
| Transparent and conducting intrinsic ZnO thin films prepared at high growth-rate with C-axis orientation and pyramidal surface texture: P. Mondal and D. Das; Appl. Surf. Sci. 286 (2013) 397–404. | ||
| SiOx nanowires with intrinsic nC-Si quantum dots: the enhancement of the optical absorption and photoluminescence: A. Samanta and D. Das; J. Mater. Chem. C 1 (2013) 6623–6629. | ||
| Electrical transport phenomena prevailing in undoped nc-Si/a-SiNx:H thin films prepared by ICP-CVD: D. Das and B. Sain; J. Appl. Phys. 114 (2013) 073708. | ||
| Nanocrystalline Silicon Thin Films Prepared by Low Pressure Planar Inductively Coupled Plasma: D. Raha and D. Das; Appl. Surf. Sci. 276 (2013)249–257. | ||
| Realizing a variety of carbon nanostructures at low temperature using MW-PECVD of (CH4 + H2) plasma: A. Banerjee and D. Das; Appl. Surf. Sci. 273 (2013) 806–815. | ||
| Tunable photoluminescence from nc-Si/a-SiNx:H quantum dot thin films prepared by ICP-CVD: B. Sain and D. Das; Phys. Chem. Chem. Phys. 15 (2013) 3881–3888. | ||
| Development of nc-Si/a-SiNx:H thin films for photovoltaic and light-emitting applications: B. Sain and D. Das; Sci. Adv. Matter. 5 (2013) 188–198. | ||
| Structural investigation of nC-Si/SiOx:H thin films from He diluted (SiH4 + CO2) plasma at low temperature: A. Samanta and D. Das; Appl. Surf. Sci. 259 (2012) 477–485. | ||
| Size Effect on Electronic Transport in nC-Si/SiOx Core/Shell Quantum Dots: D. Das and A. Samanta; Mat. Res. Bul. 47 (2012) 3625–3629. | ||
| Effect of substrate bias on the promotion of nanocrystalline silicon growth from He-diluted SiH4 plasma at low temperature: D. Das, D. Raha, W-C Chen, K-H Chen, C-T Wu and L-C Chen; J. Mater. Res. 27 (2012) 1303–1313. | ||
| Changes in Optical and Electrical Phenomena Correlated to Structural Configuration in Nanocrystalline Silicon Network: A. Samanta and D. Das; J. Electrochem. Soc. 158 (2011) A1–A7. | ||
| Controlling the growth of nanocrystalline silicon by tuning negative substrate bias: D. Raha and D. Das; Sol. Energy Mater. Sol. Cells 95 (2011) 3181–3188. | ||
| Effect of RF Power on the Formation and Size Evolution of nC-Si Quantum Dots in an Amorphous SiOx Matrix: A. Samanta and D. Das; J. Mater. Chem. 21 (2011) 7452–7458. | ||
| Photoluminescent silicon quantum dots in core/shell configuration: synthesis by low temperature and spontaneous plasma processing: D. Das and A. Samanta; Nanotechnology 22 (2011) 055601. | ||
Energy Research Unit
School of Materials Sciences
Indian Association for the Cultivation of Science
Jadavpur, Kolkata 700 032, India
E-mail: erdd@iacs.res.in, profdebajyotidas@gmail.com
Phone: +91-33-24734971 (Ext. 1600)
Fax: +91-33-24732805
