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Research Interests: 

Development of Nanomaterials and Thin Films for Energy Applications:
 
#  Silicon & Germanium Quantum-Dots, Nano-rods, Nano-tips & Superlattice structures;
#  Carbon Nano-tubes, Nanocrystalline-Diamond, DLC & Graphene;
#  Transparent Conducting Oxide Films e.g., ITO, SnO2 & doped ZnO2;
#  Photocatalytic Nanostructures e.g., Self-doped TiO2 & ZnO nanorods;
#  Solar Cells and Light Emitting Devices.

Research Projects under Execution:

Funded by:
#  Dept. of Science & Technology, GoI. (Under Nano-Mission Program);  
#  Council of Scientific & Industrial Research, GoI.

Foreign Collaborations:

National Taiwan University, Taiwan, Republic of China
Academia Sinica, Taiwan, Republic of China

Research Openings: 

Motivated students of Physics & Chemistry (Physical or Inorganic) having NET (CSIR / UGC) or Inspire (DST) Fellowship may apply with CV (to erdd@iacs.res.in) for pursuing Ph.D

Research Highlights:



Academic Profile

Education:

B.Sc.(Physics-Hons), M.Sc.(Physics), Ph.D.(Sc) from University of Calcutta
 

Professional Positions in IACS:

Lecturer :  1988–1991
Senior Lecturer :  1991–1997
Reader :  1997–2003
Professor :  2003–2007
Senior Professor :  2007–continuing
 

Professional Activities Abroad:

UNIDO Fellow, Pennsylvania State University, Pennsylvania, USA – 1989
UNIDO Fellow, National Renewable Energy Laboratory, Colorado, USA – 1989
UNIDO Fellow, Tokyo Institute of Technology, Tokyo, Japan – 1990
Visiting Scientist, Academia Sinica, Taipei, Taiwan – 2001
Charge de Recherche (Senior), Ecole Polytechnique, Palaiseau, France – 2002
Visiting Project (Collaborative) PI, National Taiwan University, Taiwan – 2010, 2011, 2012
 
Patents: 
 
# 1    US Patent No: 6,960,528
         
         Date of Award: 1st November, 2005
         Title: ‘Method of forming a nanotip array in a substrate by forming masks on portions of the substrate and etching the unmasked portions’          
 
 
# 2    Taiwan, ROC Patent Number: I-233161,
 
         Effective Period: 21st May, 2005 – 4th September, 2023.
         Title: ‘High Density Nanotip Arrays: Fabrication and Application’
 

 

Books/Chapters: 

[1]    Nanocrystalline Diamond: A High-Impact Carbon Nanomaterial for Multifunctional Applications Including as Nanofiller in Biopolymeric Matrices:

         ––  Debajyoti Das : In “Carbon-based Nanofillers and their Rubber Nanocomposits” (Elsivier Publication, USA, ed. Yaragalla, Mishra, Thomas, Kalarikkal and Maria) (November, 2018) pp. 123–181.

[2]    Solar Photovoltaic Electricity : Status and Prospects for Cost Reduction:

         –– A. K. Barua and Debajyoti Das: In “Renewable Energy : Trends and Prospects” ( Publication of ‘The Pennsylvania Academy of Science’ USA, ed. Majumdar, Miller and Panah) ( 2002) pp.199–214.

[3]    Plasma Kinetics, Surface Phenomena and Growth Mechanism in Hydrogenated Amorphous Silicon : Transition from Amorphous to Micro- and Nano-Crystalline Si:H

         –– Debajyoti Das: In “Solid State Phenomena” (Special Volume on Hydrogenated Amorphous Silicon) (Scitec Publication, Switzerland) Vol. 44-46 (1995) pp.227–258.


Group


Subhashis Samanta

Senior Research Fellow
M.Sc. in Physics (University of Calcutta) Low temperature synthesis of doped and undoped nanocrystalline silicon oxide thin films for silicon solar cell erss@iacs.res.in 1617 (Extn)



Publication

Publications

 
Photocatalytic degradation of Rhodamine-B dye by stable ZnO nanostructures with different calcination temperature induced defects: P. Nandi and D. Das; Appl. Surf. Sci. 465 (2018) 546–556.
 
Melting point of Sn as the optimal growth temperature in realizing the favored transparent conducting properties of In2O3:Sn films: L. Karmakar and D. Das; J. Alloys Compd. 767 (2018) 642–650.
 
Low temperature growth of carbon nanotubes by microwave plasma stimulated by CO2 as weak oxidant and guided by shadow masking: A. Roy and D. Das; Diam. Relat. Mater. 88 (2018) 204–214.
 
Self-doped TiO2 nanowires in TiO2-B single phase, TiO2-B/anatase and TiO2- anatase/rutile heterojunctions demonstrating individual superiority in photocatalytic activity under visible and UV light: P. Makal and D. Das; Appl. Surf. Sci. 455 (2018) 1106–1115.
 
Microstructural association of diverse chemical constituents in nc-SiOx:H network synthesized by spontaneous low temperature plasma processing: S. Samanta and D. Das; Physica E 103 (2018) 99–109.
 
Structural, Magnetic and Optical Properties of Lanthanum Ferrite Nanoparticles with Application Perspective: S.K. Kundu, D.K. Rana, A. Mukherjee, A. Banerjee, D. Das, S. Basu; Adv. Sci. Lett. 24 (2018) 913–917.
 
Controlling the opto-electronic properties of nc-SiOx:H films by promotion of <220> orientation in the growth of ultra-nanocrystallites at the grain boundary: D. Das and S. Samanta; Appl. Surf. Sci. 428 (2018) 757–766.
 
Enhancement of multiferroic properties and unusual magnetic phase transition in Eu doped bismuth ferrite nanoparticles: M. Banerjee, A. Mukherjee, A. Banerjee, D. Das and S. Basu, New J. Chem. 41 (2017) 10985–10991.
 
Structural studies of n-type nc-Si–QD thin films for nc-Si solar cells: D. Das and D. Kar; J. Phys. Chem. Solids 111 (2017) 115–122.
 
Development of optimum p–nc-Si window layers for nc-Si solar cells: P. Mondal and D. Das; Phys. Chem. Chem. Phys. 19 (2017) 21357–21363.
 
Magnetic anomalies in Fe-doped NiO nanoparticle: R. Pradeep, A.C. Gandhi, Y. Tejabhiram, I.K.Md. Mathar Sahib, Y. Shimura, L. Karmakar, D. Das, S.Y. Wu and Y. Hayakawa; Mater. Res. Express 4 (2017) 096103.
 
Effect of oxygen on the optical, electrical and structural properties of mixed-phase boron doped nanocrystalline silicon oxide thin films: D. Das and P. Mondal; Appl. Surf. Sci. 423 (2017) 1161–1168.
 
Structural characterization of silicon thin film superlattice grown at low temperature: D. Kar and D. Das; Superlat. and Microstruc. 111 (2017) 385–395.
 
Correlation between the physical parameters of the i–nc-Si absorber layer grown by 27.12 MHz plasma with the nc-Si solar cell parameters: D. Das and P. Mondal; Appl. Surf. Sci. 416 (2017) 980–987.
 
The growth of ZnO:Ga:Cu as new TCO film of advanced electrical, optical and structural quality: D. Das and P. Mondal; Physica E 91 (2017) 1–7.
 
Further improvements in conducting and transparent properties of ZnO:Ga films with perpetual c-axis orientation: materials optimization and application in silicon solar cells: P. Mondal and D. Das; Appl. Surf. Sci. 411 (2017) 315–320.
 
Nanocrystalline silicon thin films from SiH4 plasma diluted by H2 and He in RF-PECVD: S. Samanta and D. Das; J. Phys. Chem. Solids 105 (2017) 90–98.
 
Effect of hydrogen in controlling the structural orientation of ZnO:Ga:H as transparent conducting oxide films suitable for applications in stacked layer devices: P. Mondal and D. Das; Phys. Chem. Chem. Phys. 18 (2016) 20450–20458.
 
Effect of hydrogen in controlling the structural orientation of ZnO:Ga:H as transparent conducting oxide films suitable for applications in stacked layer devices: P. Mondal and D. Das; Phys. Chem. Chem. Phys. 18 (2016) 20450–20458.
 
Opto-electronic properties of P-doped nc-Si–QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration: D. Kar and D. Das; J. Appl. Phys. 120 (2016) 025102.
 
Low temperature grown ZnO:Ga films with predominant c-axis orientation in wurtzite structure demonstrating high conductance, transmittance and photoluminescence: D. Das and P. Mondal; RSC Adv., 6 (2016) 6144–6153.
 
Self-assembled nc-Si–QD/a-SiC thin films from planar ICP-CVD plasma without H2-dilution: a combination of wide optical gap, high conductivity and preferred <220> crystallographic orientation, uniquely appropriate for nc-Si solar cells: D. Das and D. Kar; RSC Adv., 6 (2016) 3860–3869.
 
Rapid synthesis of nc-Si/a-SiNx:H QD thin films by plasma processing for their cost effective applications in photonic and photovoltaic devices: D. Das and B. Sain; RSC Adv. 5 (2015) 63572–63579.
 
Superior optical response of size-controlled silicon nano-crystals in a-Si:H/nc-Si:H superlattice films for multi-junction solar cells: D. Kar and D. Das; RSC Adv. 5 (2015) 61118–61126.
 
Preferential <220> crystalline growth in nanocrystalline silicon films from 27.12 MHz SiH4 plasma for applications in solar cells: P. Mondal and D. Das; RSC Adv. 5 (2015) 54011–54018.
 
Investigation of the vertical electrical transport in a-Si:H/nc-Si:H superlattice thin films: D. Das and D. Kar; Phys. Chem. Chem. Phys. 17 (2015) 17063–17068.
 
Further improvements of nano-diamond structures on unheated substrates by optimization of parameters with secondary plasma in MW-PECVD: D. Das and A. Banerjee; Surf. Coat. Tech. 272 (2015) 357–365.
 
Anti-Reflection coatings for silicon solar cells from hydrogenated diamond like carbon: D. Das and A. Banerjee; Appl. Surf. Sci. 345 (2015) 204–215.
 
Quantum size effects on the optical properties of nc-Si QDs embedded in an a-SiOx matrix synthesized by spontaneous plasma processing: D. Das and A. Samanta; Phys. Chem. Chem. Phys. 17 (2015) 5063–5071.
 
Self-assembled ultra-nanocrystalline silicon films with preferred <220> crystallographic orientation for solar cell applications: A. Banerjee and D. Das; Appl. Surf. Sci. 330 (2015) 134–141.
 
Self-assembled nc-Si/a-SiNx:H quantum dots thin films – An alternative solid-state light emitting material: B. Sain and D. Das; J. Lumin. 158 (2015) 11–18.
 
Spectroscopic and microscopic studies of self-assembled nc-Si/a-SiC thin films grown by low pressure high density spontaneous plasma processing: D. Das and D. Kar; Phys. Chem. Chem. Phys. 16 (2014) 25421–25431.
 
Low temperature plasma processing of nc-Si/a-SiNx:H QD thin films with high mobility and preferred (220) orientation – a promising material for third generation solar cells: B. Sain and D. Das; RSC Adv. 4 (2014) 36929–36939.
 
Photoluminescence phenomena prevailing in c-axis oriented intrinsic ZnO thin films prepared by RF magnetron sputtering: D. Das and P. Mondal; RSC Adv. 4 (2014) 35735–35743.
 
Spectroscopic studies on nC-Si thin films prepared from H2-diluted SiH4-plasma in inductively coupled low pressure RF PECVD: M. Chakraborty, A. Banerjee and D. Das; Phys. E 61 (2014) 95–100.
 
Low temperature synthesis of spherical nano-diamond: A. Banerjee and D. Das; J. Exp. Nanosci. 9 (2014) 818–824.
 
Conducting Wide Band Gap nc-Si/a-SiC:H Films for Window Layers in nc-Si Solar Cells: D. Kar and D. Das; J. Mater. Chem. A 1 (2013) 14744–14753.
 
Transparent and conducting intrinsic ZnO thin films prepared at high growth-rate with C-axis orientation and pyramidal surface texture: P. Mondal and D. Das; Appl. Surf. Sci. 286 (2013) 397–404.
 
SiOx nanowires with intrinsic nC-Si quantum dots: the enhancement of the optical absorption and photoluminescence: A. Samanta and D. Das; J. Mater. Chem. C 1 (2013) 6623–6629.
 
Electrical transport phenomena prevailing in undoped nc-Si/a-SiNx:H thin films prepared by ICP-CVD: D. Das and B. Sain; J. Appl. Phys. 114 (2013) 073708.
 
Nanocrystalline Silicon Thin Films Prepared by Low Pressure Planar Inductively Coupled Plasma: D. Raha and D. Das; Appl. Surf. Sci. 276 (2013)249–257.
 
Realizing a variety of carbon nanostructures at low temperature using MW-PECVD of (CH4 + H2) plasma: A. Banerjee and D. Das; Appl. Surf. Sci. 273 (2013) 806–815.
 
Tunable photoluminescence from nc-Si/a-SiNx:H quantum dot thin films prepared by ICP-CVD: B. Sain and D. Das; Phys. Chem. Chem. Phys. 15 (2013) 3881–3888.
 
Development of nc-Si/a-SiNx:H thin films for photovoltaic and light-emitting applications: B. Sain and D. Das; Sci. Adv. Matter. 5 (2013) 188–198.
 
Structural investigation of nC-Si/SiOx:H thin films from He diluted (SiH4 + CO2) plasma at low temperature: A. Samanta and D. Das; Appl. Surf. Sci. 259 (2012) 477–485.
 
Size Effect on Electronic Transport in nC-Si/SiOx Core/Shell Quantum Dots: D. Das and A. Samanta; Mat. Res. Bul. 47 (2012) 3625–3629.
 
Effect of substrate bias on the promotion of nanocrystalline silicon growth from He-diluted SiH4 plasma at low temperature: D. Das, D. Raha, W-C Chen, K-H Chen, C-T Wu and L-C Chen; J. Mater. Res. 27 (2012) 1303–1313.
 
Changes in Optical and Electrical Phenomena Correlated to Structural Configuration in Nanocrystalline Silicon Network: A. Samanta and D. Das; J. Electrochem. Soc. 158 (2011) A1–A7.
 
Controlling the growth of nanocrystalline silicon by tuning negative substrate bias: D. Raha and D. Das; Sol. Energy Mater. Sol. Cells 95 (2011) 3181–3188.
 
Effect of RF Power on the Formation and Size Evolution of nC-Si Quantum Dots in an Amorphous SiOx Matrix: A. Samanta and D. Das; J. Mater. Chem. 21 (2011) 7452–7458.
 
Photoluminescent silicon quantum dots in core/shell configuration: synthesis by low temperature and spontaneous plasma processing: D. Das and A. Samanta; Nanotechnology 22 (2011) 055601.

 



Contact Us

Contact Information :

Energy Research Unit
School of Materials Sciences

Indian Association for the Cultivation of Science
Jadavpur, Kolkata 700 032, India
E-mail:
erdd@iacs.res.in, profdebajyotidas@gmail.com

Phone: +91-33-24734971 (Ext. 1600)
Fax: +91-33-24732805